Difference Between P-Type and N-Type Semiconductor (with Comparison Chart) - Electronics Desk (2024)

Both p-type and n-type semiconductor is the classification of extrinsic semiconductors. The major factor that generates a difference between p-type and n-type semiconductor lies in their doping material. A p-type semiconductor material is formed by the addition of group III elements or we can say trivalent impurity to a pure (intrinsic) semiconductor. On the contrary, the n-type semiconductor material is formed by the addition of group V elements i.e., a pentavalent impurity to a pure or intrinsic semiconductor.

Some other factors also exist that generates major differences between the two. We will discuss these differences in detail but before proceeding towards that have a look at the contents that are to be discussed under this article.

Content: P-Type Vs N-Type Semiconductor

1. Comparison Chart
2. Definition
3. Key Differences
4. Conclusion

Comparison Chart

Definition of P-type semiconductor

When a pure or intrinsic semiconductor is doped with group III elements of periodic table like boron, gallium, aluminium etc. that these are known as the p-type extrinsic semiconductor. These are called so because doping these elements will lead to the presence of an extra hole in the valence shell of the atom.

Let us have a look at the figure shown below that represents doping of aluminium to a pure silicon material:

As we know that an aluminium atom contains 3 electrons at its valence shell. Also, silicon contains total of 4 electrons at its valence shell. So, 3 valence electrons of aluminium atom make covalent bonds with 3 electrons of silicon. However, in this case, a vacancy of an electron (or a hole) appears. The movement of this hole is mainly responsible for the conduction in the p-type semiconductor to take place. Hence, in this case, charge carriers are holes rather than electrons.

Let us now have a look at the energy level diagram of a p-type semiconductor:

Here, we can see that the Fermi level is present near the valence band. As it is clear from the above figure that there exists a very small energy difference between valence band and the acceptor energy level. Thus, electrons easily drift to acceptor energy level creating a vacancy of electrons. Hence, producing holes in the valence band.

Definition of N-type semiconductor

N-type extrinsic semiconductors are formed when group V elements like phosphorus, antimony, bismuth etc. are doped to a pure semiconductor crystal. These are called so because doping these elements will cause the presence of an additional electron in the valence shell of the atom.

The figure below represents the doping of phosphorus element into a pure silicon material:

We already know that phosphorus consists of 5 electrons at its valence shell. When it is doped with pure silicon having 4 electrons at the valence shell then it forms 4 covalent bonds. This leads to the presence of an unbounded electron that is held free to move into the conduction band. This electron is known as a free electron and its movement raises the conductivity of the material.

Now, have a look at the energy band diagram of N-type semiconductor:

Here, from the figure, it is clear that the existence of the Fermi level is near the conduction band. We can see that the small energy difference exists between donor energy level and the conduction band. So, less energy is needed by the electrons to reach the conduction band.

Conclusion

So, from the above discussion, we can conclude that a p-type semiconductor is abbreviated so because these are positive semiconductors due to presence of extra holes. Whereas, n-type semiconductors are termed as negative semiconductors because of the presence of extra electrons.