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Volume 91, Issue 6
15 March 2002
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Research Article| March 15 2002
Tsung-Hsing Yu;
Tsung-Hsing Yu
School of Electrical and Computer Engineering, Georgia Tech, Atlanta, Georgia 30332-0250
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Kevin F. Brennan
Kevin F. Brennan
School of Electrical and Computer Engineering, Georgia Tech, Atlanta, Georgia 30332-0250
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J. Appl. Phys. 91, 3730–3736 (2002)
Article history
Received:
November 15 2001
Accepted:
December 12 2001
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Citation
Tsung-Hsing Yu, Kevin F. Brennan; Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructures. J. Appl. Phys. 15 March 2002; 91 (6): 3730–3736. https://doi.org/10.1063/1.1448889
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We present detailed Monte Carlo based calculations of the electron dynamics in GaN–AlGaN heterostructures in the presence of strain polarization fields. The model consists of a fully numerical self-consistent solution of the Schrödinger–Poisson equation with a Monte Carlo transport model. The two-dimensional sub-band energies, wave functions and carrier scattering mechanisms are computed numerically and included within a Monte Carlo simulation. The electron energy, steady-state and transient drift velocity and band occupancy are calculated as a function of electric field for different AlGaN–GaN heterostructure compositions. The effect of piezoelectrically induced strain fields on the transport dynamics is examined. A field dependent mobility model is also developed from the Monte Carlo results.
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